unisonic technologies co., ltd 7N60K power m o sfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-776.c 7.4 a , 600v n-channel power mosfet ? descripti on t he u t c 7N60K is a hi g h voltag e po w e r mosf et and is desig ne d to have better characteristics, such as fast s w itc h ing time , lo w gate char ge, lo w on-state resistance and hav e a high rugged avalanche characteristics. t h is po w e r mos f et is usuall y used at high sp ee d s w itching a p p licat ions in s w itc h i ng po w e r sup p lies a n d ada ptors. ? features * r ds ( on ) < 1 . 2 ? @ v gs = 10v * ultra lo w gate charg e (t y p ic al 29 n c ) * lo w rev e rse t r ansfer ca pacit ance ( c r ss = t y pi ca l 16 p f ) * f a st s w itchi ng capa bil i t y * ava l an ch e energy t e ste d * improved dv/dt capa bilit y, hi g h rug ged ness ? sy mbol ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lea d f r ee halo ge n f r ee 1 2 3 7n60 kl-t a3-t 7n60 kg-t a3-t t o -220 g d s tube 7n60 k l-t f 3-t 7n60 kg-t f 3 -t t o -220f g d s tube 7n60 kl-t q2-r 7n60 kg-t q2-r t o -263 g d s tape reel 7n60 kl-t q2-t 7n60 kg-t q2-t t o -263 g d s tube note: pin assignment: g: ga te d: drain s: source http://
7N60K power m o sfet unisonic technologi es co., ltd 2 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 6 . c ? absolute maxi mu m ra ting s (t c = 25c, unless other w i se specifie d) paramet er symbol rat i ngs unit drain-s ource voltag e v ds s 600 v gate-source voltage v gss 30 v avala n che c u r r ent (note 2) i ar 7.4 a drain current contin uo us i d 7.4 a pulse d (note 2 ) i dm 29.6 a avalanche energy singl e puls ed ( note 3) e as 220 mj repetitiv e (not e 2) e ar 14.2 mj peak di ode r e cover y dv/dt (n ote 4) dv/dt 4.5 v/ns power dissipation t o -220 p d 142 w t o -220f 48 to-263 50 junctio n t e mperature t j + 150 c storage t e mperature t st g -55 ~ +150 c notes: 1. absol u te ma xi mum ratings ar e those val ues be yo nd w h ich the dev ice cou l d be perm ane n t l y dam ag ed. absol u te ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op er atio n is not i m plie d. 2. repetitiv e rati ng : pulse w i dth lim ited b y m a xim u m juncti on temperature 3. l = 9mh, i as = 7a, v dd = 90v, r g = 2 5 ? , sta r ting t j = 25c 4. i sd 7.4a, di/dt 200a/ s, v dd bv ds s , starti ng t j = 25c ? th er mal dat a paramet er symbol rat i ngs unit junction to ambient to-220/to-220f/to-263 ja 62.5 c/w junction to case t o -220 jc 0.88 c/w t o -220f 2.6 to-263 2.5
7N60K power m o sfet unisonic technologi es co., ltd 3 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 6 . c ? electric al ch ara cteri s tic s (t c = 25c, unless oth e r w is e specifi ed) parameter symbol test conditions min typ max unit off characteristics drain-s ource breakd o w n vo l t age bv ds s v gs = 0 v , i d = 250 a 600 v drain-s ource l eaka ge curr en t i ds s v ds = 600v, v gs = 0v 1 a gate- source l eaka ge curr en t fo rw ard i gss v gs = 30v, v ds = 0v 100 na reverse v gs = -30v, v ds = 0v -100 na breakd o w n vo l t age t e mperature coefficient bv ds s / t j i d = 250 a,ref e rence d to 25c 0.67 v/c on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.5 4.5 v static drain-source on-state resistance r ds ( on ) v gs = 10v, i d = 3.7a 1.0 1.2 ? dynamic characteristics input cap a cita nce c iss v ds = 25v, v gs =0v, f= 1.0 mhz 140 0 pf output capac itance c oss 180 pf reverse transfer capacitance c rss 16 21 pf switching characteristics turn-on delay time t d ( on ) v dd = 300v, i d =7.4a, r g =2 5 ? (note 1, 2) 70 ns t u rn-on rise t i me t r 90 170 ns turn-off delay time t d ( off ) 140 ns turn-off fall time t f 55 130 ns switching characteristics t o tal gate charge q g v ds = 480v, i d =7 .4 a, v gs =10v (note 1, 2) 29 38 nc gate-source c harg e q gs 7 nc gate-drain charge q gd 14.5 nc drain-source diode characteristics and maximum ratings drain-s ource diod e f o r w ard voltage v sd v gs = 0 v , i s = 7.4 a 1.4 v maximum co ntinuo us drai n-s ource di od e fo rw ard c u rren t i s 7.4 a maximum puls ed drai n-so urc e diod e fo rw ard cu rren t i sm 29.6 a reverse recover y t i me t r r v gs = 0 v , i s = 7.4 a, di f / dt = 100a/ s (note 1) 320 ns reverse recover y charge q rr 2.4 c notes: 1. pulse t e st: pulse w i dth 30 0 s , d u ty cy cl e 2% 2. essentially independent of operating temperature
7N60K power m o sfet unisonic technologi es co., ltd 4 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 6 . c ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * d v/dt controlled by r g * i sd co ntro l l e d by pu l se pe rio d * d. u. t.-d e vice u n de r t e st - + peak diod e r eco v e r y d v /d t t est circu i t p. w. period d= v gs (d r i ve r) i sd (d .u .t . ) i fm , b ody di od e fo rward c u rren t di /d t i rm bo dy dio de r e ve rse curre nt bo dy di ode reco very dv/dt bod y diode forward voltage drop v dd 10 v v ds (d.u.t. ) v gs = p.w. period peak dio d e r eco v e r y d v /d t w a v e fo rms
7N60K power m o sfet unisonic technologi es co., ltd 5 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 6 . c ? test circuits and waveforms (cont.) v gs d.u.t. r g 10v v ds r l pulse width 1 s duty factor 0.1% v dd s w itch ing t est circu i t sw it c h i n g w ave f o r m s 50 k ? 0.3f dut same type as d.u.t. 0 . 2f 12v v gs 3ma v ds gate ch arg e t est circu i t gate charge wav e form unc l a m pe d in duc ti v e s w i t c h ing te s t circ uit unc l a m pe d in duc ti v e s w i t c h ing wav e forms
7N60K power m o sfet unisonic technologi es co., ltd 6 of 6 w w w . uniso nic.co m.t w q w - r 5 0 2 - 7 7 6 . c ? typical characteristics drain current, i d (a) drain current, i d (a) drain current, i d (a) drain current, i d (a) ut c as s um es no r es pons i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r oduc t s at v al ues t hat exceed, ev en m o m ent ar i l y , r a t ed v a l ues ( s uc h as m a x i m u m r a t i n g s , op era t i ng c o ndi t i on ra nges , o r ot her par am et er s ) l i s t ed i n pr oduc t s s pec i f i c at i ons of any and al l ut c pr oduc t s des c r i bed or c ont ai ned her ei n. ut c pr oduc t s are not des i gned f or us e i n l i f e s uppor t appl i anc es , dev i c es or s y s t em s w her e m a l f unc t i on of t hes e pr oduc t s c an be r eas ona bl y ex pec t ed t o res u l t i n per s ona l i n j u r y . re pro duc t i on i n w hol e or i n pa rt i s pr ohi bi t ed w i t hout t he pri o r w r i t t en c ons ent o f t he c o p y r i ght ow ner. t he i n f o r m at i o n pr es ent e d i n t h i s doc um en t do es not f o r m p a rt of any quo t a t i on or c ont r a c t , i s bel i e v ed t o be ac c u r a t e and r el i a bl e and m ay b e c hanged w i t hout n ot i c e.
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